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• Transistor Type: NPN Silicon RF Power Transistor
• Frequency Range: 130 MHz – 230 MHz
• Output Power: 4 W
• Supply Voltage: 12.5 V
• Gain: High Power Gain
• Operation Class: FM Class C
• Configuration: Common Emitter
• Technology: Epitaxial Silicon NPN Planar
• Maximum Collector Current: 1 A
• Maximum Power Dissipation: 12 W
• Transition Frequency (fT): 175 MHz
• Designed for VHF Mobile and Marine Transmitters
• High efficiency operation
• Robust structure suitable for harsh operating conditions
• Emitter ballast resistance technology
• Suitable for RF power amplifiers
• Used in VHF communication systems
• Suitable for mobile radio and marine transmitter applications