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Transistor Type: NPN Silicon Wideband RF Transistor
• Frequency Range: DC – 4 GHz
• Transition Frequency (fT): 4 GHz
• Collector-Emitter Voltage (VCEO): 18 V
• Collector-Base Voltage (VCBO): 25 V
• Maximum Collector Current: 150 mA
• Maximum Power Dissipation: 2.7 W
• Gain (hFE): 25 – 70
• Structure: Silicon Planar Epitaxial NPN
• High output voltage capacity
• Diffused emitter-ballasting resistor technology
• Gold sandwich metallization structure
• High reliability and thermal stability
• Designed for MATV system amplifiers
• Used in driver and final RF amplifier stages
• Suitable for Band IV and Band V TV equipment
• Used in low-power UHF broadcast applications
• Suitable for 75 Ohm wideband RF systems
• TO-122A / SOT122A ceramic sealed metal package structure
• Suitable for use in broadcast and RF communication systems
