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• Transistor Type: NPN Silicon RF Broadband Transistor
• Frequency Range: 40 MHz – 860 MHz
• Transition Frequency (fT): 1.2 GHz
• Collector-Emitter Voltage (VCEO): 25 V
• Collector-Base Voltage (VCBO): 40 V
• Maximum Collector Current: 150 mA
• Maximum Peak Collector Current: 300 mA
• Maximum Power Dissipation: 1.5 W
• Gain: Approximately 16 dB @ 200 MHz
• Noise Figure: 6 dB @ 200 MHz
• Structure: Silicon Planar Epitaxial NPN
• Multi-Emitter Technology
• High intermodulation performance
• Designed for CATV and MATV wideband amplifiers
• Suitable for channel and band series amplifier applications
• Used in VHF and UHF RF amplifiers
• Used in high-speed oscilloscope vertical amplifier stages
• TO-39 Metal Package (Metal Can Package)
• Suitable for use in broadcast and RF communication systems
