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• Manufacturer: Toshiba
• Product Type: NPN RF Power Transistor
• Technology: Silicon Bipolar RF Transistor
• Operating Frequency: VHF Band
• Frequency Range: up to 175 MHz
• Supply Voltage: 12.5 V
• RF Output Power: 30 W
• Gain: Approximately 8 – 10 dB
• Operating Mode: Class C RF Amplifier
• Package Type: Flanged Metal-Ceramic Package
• Low distortion structure
• High RF endurance
• Suitable for broadcast and communication systems
• Commonly used in FM transmitter applications
• Optimized design for VHF RF power amplifiers
• Suitable for high-efficiency RF amplifier applications