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Model: BLF278
Manufacturer: NXP Semiconductors
Type: RF Power MOSFET
Technology: N-Channel Enhancement Mode MOSFET
Application Area: FM Broadcast / VHF RF Power Amplifier
Operating Frequency: 1.6 – 108 MHz
Output Power: 300 W
Supply Voltage: 50 V
Gain: Approximately 23 dB
Efficiency: Up to 70%
Drain-Source Voltage (VDSS): 125 V
Drain Current (ID): 18 A
Power Dissipation: 625 W
Package Type: SOT121B Flange Package
Pin Structure: 3 Pin RF Power Package
Feature: Internal ESD protection
Feature: High ruggedness (load mismatch tolerance)
Feature: Low input capacitance
Feature: Optimized structure for broadcast transmitters
Application Area: FM broadcast transmitters, RF power stages, VHF linear amplifiers