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Product Type: NPN Silicon RF Power transistor
Usage Area: UHF TV and RF amplifier applications
Frequency Range: 470 MHz – 860 MHz
Output Power: 1 W
Gain: 10.5 dB
Supply Voltage: 20 V
Current: 440 mA
Structure: Bipolar / Common Emitter
Package Type: Stud Package
Transition Frequency (fT): Approximately 2.5 GHz
Collector-Emitter Voltage (VCEO): 24 V
Collector-Base Voltage (VCBO): 45 V
Emitter-Base Voltage (VEBO): 3.5 V
Maximum Collector Current: 1.4 A
Maximum Power Dissipation: 19 W
Operating Temperature: -65 °C / +200 °C
