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• Product Type: HF/VHF RF Power MOSFET
• Technology: Silicon N-Channel Enhancement Mode DMOS
• Operating Frequency: HF / VHF Band
• Frequency Range: 1 – 175 MHz
• Supply Voltage: 50 V
• RF Output Power: 150 W
• Gain:
• Approximately 22 dB at 30 MHz
• Approximately 14 dB at 175 MHz
• Efficiency: Approximately 70% (@108 MHz Class-B)
• Maximum Drain Current: 16 A
• Maximum Power Dissipation: 300 W
• Drain-Source Breakdown Voltage: 125 V
• Low intermodulation distortion
• High thermal stability
• Full load mismatch durability
• Suitable for push-pull RF amplifier applications
• Package Type: Flanged Ceramic RF Package
• Commonly used in Broadcast FM transmitter applications
• Optimized design for HF/VHF power amplifier systems